Published: Wed, December 06, 2017
Hi-Tech | By Cory Rios

Samsung Has Begun Production of 512GB Flash Storage For Next Gen Phones

Samsung Has Begun Production of 512GB Flash Storage For Next Gen Phones

Samsung has announced that it is mass-producing the industry's first 512GB embedded Universal Flash Storage (eUFS) solution, leading many to believe that the Galaxy S9 will ship with the high-capacity module. Despite offering twice the storage, it's still the same size as the 48-layer V-NAND-based 256GB eUFS Samsung launched in February past year. That sort of content is becoming more popular as sharper displays and enhanced cameras are included on smartphones. Imagine pairing a ton of storage alongside Qualcomm's Snapdragon 845 system-on-chip (SoC), or Samsung's recently announced Exynos 9810 (Samsung typically uses two SoCs for its flagship phones, tapping its own silicon for models that ship internationally and Qualcomm's hardware for USA variants).

The solution consists of eight 64-layer 512 Gb V-NAND chips and a controller chip, which the team claims doubles the density of Samsung's previous 48-layer V-NAND-based 256 GB eUFS, using the same amount of space. Obviously, these chips are being used in more than just mobile phones, since SSDs and high-performance removable memory cards also take advantage of their performance and reliability.

High storage phones models now come with 128GB or 256GB of memory, but Samsung's new 512GB chip is double or quadruple that.

The 64-layer 512Gb V-NAND's advanced circuit design and new power management technology will potentially help the Galaxy S9 to exhibit better battery life. The company says that's about a tenfold increase over a 64GB eUFS, which lets users store about 13 of the equivalently sized videos.

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The Samsung 512GB eUFS also features strong read and write performance. That's eight times faster than a typical microSD card.

For the other part of the equation-random performance-Samsung rates the new eUFS for up to 42,000 IOPS for random reads and up to 40,000 IOPS for random writes.

Would you still be interested in picking up the Galaxy S9 if it shipped with 500GB of internal flash storage instead of a microSD slot? According to Samsung, the random writes of the UFS package are approximately 400 times faster than the 100 IOPS speed of a conventional microSD card.

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